| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 6.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 242 mW |
| Input Capacitance | 9.16 nF |
| Gate Charge | 145 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDP5800 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protection circuit and uninterruptible power supplies applications.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handing capability
Fairchild
8 Pages / 0.55 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
1 Pages / 0.14 MByte
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