| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 52.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 49.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 357 W |
| Input Capacitance | 2.90 nF |
| Gate Charge | 63.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 52.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDP52N20 is an N-channel MOSFET produced from Fairchild Semiconductor"s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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Fairchild
FDP52N20 Series 200V 52A 0.049Ω Through Hole N-Channel MOSFET - TO-220-3
Freescale
MOSFET N-CH 200V 52A TO-220
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