| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 33.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 94.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 235 W |
| Input Capacitance | 2.13 nF |
| Gate Charge | 48.0 nC |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 33.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDP33N25 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 100% Avalanche tested
● 36.8nC Typical low gate charge
● 39pF Typical low Crss
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Trans MOSFET N-CH 250V 33A 3Pin(3+Tab) TO-220AB Rail
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