| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 2.70 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 46.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 480 pF |
| Gate Charge | 5.00 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 2.70 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Very fast switching
● Low gate charge
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