| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -1.50 A |
| Case/Package | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 125 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 560 mW |
| Input Capacitance | 182 pF |
| Gate Charge | 4.00 nC |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
● High performance Trench technology for extremely low RDS (ON)
● 4nC Typical low gate charge
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