TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -1.60 A |
Case/Package | TO-236-3, SC-59, SOT-23-3 |
Drain to Source Resistance (on) (Rds) | 115 mΩ |
Polarity | P-Channel |
Power Dissipation | 500 mW |
Drain to Source Voltage (Vds) | -20.0 V |
Breakdown Voltage (Drain to Source) | -20.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 1.60 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT), Tape & Reel (TR) |
The FDN338P is a 2.5V specified P-channel MOSFET uses Fairchild"s advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
5 Pages / 0.31 MByte
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Fairchild
P-Channel 2.5V Specified PowerTrench® MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDN338P MOSFET Transistor, P Channel, 1.6A, 20V, 130mohm, -4.5V, -800mV
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