| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.30 A |
| Case/Package | SuperSOT |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 330 pF |
| Gate Charge | 3.60 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 1.20 A |
| Rise Time | 12.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FDN336P is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion. The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
● High performance Trench technology for extremely low RDS (ON)
● 3.6nC Typical low gate charge
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