TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.70 A |
Case/Package | SOT-23 |
Drain to Source Resistance (on) (Rds) | 70.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Input Capacitance | 40.0 pF |
Gate Charge | 3.50 nC |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Drain to Source) | -60.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 1.70 A |
Rise Time | 8.50 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT), Tape & Reel (TR) |
The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
● Low gate threshold voltage
● High performance trench technology for extremely low RDS
● High power and current handling capability
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