| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.50 A |
| Case/Package | SuperSOT |
| Drain to Source Resistance (on) (Rds) | 86.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 341 pF |
| Gate Charge | 3.80 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | -1.50 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDN308P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management and load switch applications with a wide range of gate drive voltage (2.5 to 12V). The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
14 Pages / 0.25 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
5 Pages / 0.09 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDN308P MOSFET Transistor, P Channel, -1.5A, -20V, 125mohm, -4.5V, -1V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
