General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
●Features
●Max rDS(on)= 5.0 mΩ at VGS= 10 V, ID= 19 A
●Max rDS(on)= 6.9 mΩ at VGS= 4.5 V, ID= 15 A
●Advanced Package and Silicon design for low rDS(on) and high efficiency
●Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
●MSL1 robust package design
●100% UIL tested
●RoHS Compliant
●Applications
●IMVP Vcore Switching for Notebook
●VRM Vcore Switching for Desktop and Server
●OringFET / Load Switch
●DC-DC Conversion