| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -6.60 A |
| Case/Package | µFET |
| Drain to Source Resistance (on) (Rds) | 42.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.40 W |
| Input Capacitance | 1.00 nF |
| Gate Charge | 14.0 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | -6.60 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDMA291P is a 1.8V specified single P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Halogen-free
Fairchild
2 Pages / 0.24 MByte
Fairchild
6 Pages / 1.89 MByte
Fairchild
6 Pages / 0.24 MByte
Fairchild
6 Pages / 0.65 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2MM, 0.8MM HEIGHT, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, MO-229, MICROFET-6
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
