TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 700 mA |
Case/Package | SOT-363 |
Drain to Source Resistance (on) (Rds) | 300 mΩ |
Polarity | N-Channel, Dual N-Channel |
Power Dissipation | 300 mW |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
Continuous Drain Current (Ids) | 700 mA |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±12V Gate to source voltage
● 0.7A Continuous drain current
● 2.1A Pulsed drain current
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