| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 700 mA |
| Case/Package | SC-70 |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 300 mW |
| Input Capacitance | 114 pF |
| Gate Charge | 1.40 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | -20.0 V to 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 700 mA |
| Rise Time | 14.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
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