| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -700 mA |
| Case/Package | 6-TSSOP, SC-88, SOT-363 |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 300 mW |
| Input Capacitance | 146 pF |
| Gate Charge | 1.70 nC |
| Drain to Source Voltage (Vds) | -12.0 V |
| Breakdown Voltage (Drain to Source) | -12.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | -700 mA |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDG6316P is a dual P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery management and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±8V Gate to source voltage
● -0.7A Continuous drain current
● -1.8A Pulsed drain current
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