| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -600 mA |
| Case/Package | SC-70 |
| Drain to Source Resistance (on) (Rds) | 420 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 300 mW |
| Input Capacitance | 114 pF |
| Gate Charge | 1.40 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 600 mA |
| Rise Time | 14.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDG6306P is a dual P-channel MOSFET rugged gate version advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use with battery management and load switch applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount-package
● ±12V Gate to source voltage
● -0.6A Continuous drain current
● -2A Pulsed drain current
Fairchild
3 Pages / 0.15 MByte
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Trans MOSFET P-CH 20V 0.6A 6Pin SC-70 T/R
Fairchild
P-Channel 2.5V Specified PowerTrench MOSFET
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