TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.50 A |
Case/Package | SC-70 |
Drain to Source Resistance (on) (Rds) | 90.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 420 mW |
Input Capacitance | 412 pF |
Gate Charge | 4.20 nC |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 1.50 A |
Rise Time | 12.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
The FDG327NZ is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● Low gate charge
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