| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.20 A |
| Case/Package | 6-TSSOP, SC-88, SOT-363 |
| Drain to Source Resistance (on) (Rds) | 135 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 750 mW |
| Input Capacitance | 330 pF |
| Gate Charge | 3.30 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Drain to Source) | -200 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 1.20 A |
| Rise Time | 12.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor"s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Power management • DC/DC converter Features • Low gate charge. • High performance trench technology for extremely low RDS(ON). • Compact industry standard SC70-6 surface mount package.
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