| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 4.50 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 88.0 W |
| Drain to Source Voltage (Vds) | 25V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 35.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
●Features
● Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
● Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
● Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
● Low gate resistance
● Avalanche rated and 100% tested
● RoHS Compliant
●Application
● Vcore DC-DC for Desktop Computers and Servers
● VRM for Intermediate Bus Architecture
Fairchild
7 Pages / 0.5 MByte
Fairchild
18 Pages / 0.94 MByte
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