| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | DPAK |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 100V |
| Continuous Drain Current (Ids) | 8A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDD86102LZ is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level.
● Very low Qg and Qgd compared to competing Trench technologies
● Fast switching speed
● 100% UIL tested
● >6kV Typical HBM ESD protection level
Fairchild
7 Pages / 0.52 MByte
Fairchild
7 Pages / 0.87 MByte
Fairchild
Trans MOSFET N-CH 100V 8A 3Pin(2+Tab) DPAK T/R
Fairchild
Trans MOSFET N-CH 100V 8A 3Pin(2+Tab) DPAK T/R
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