| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 46.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 12.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Input Capacitance | 1.23 nF |
| Gate Charge | 13.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 46.0 A |
| Rise Time | 7.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDD6690A is a N-channel Logic level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
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14 Pages / 0.32 MByte
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