| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 84.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 4.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 83.0 W |
| Input Capacitance | 3.84 nF |
| Gate Charge | 37.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 84.0 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
●Features
●· 84 A, 30 V. RDS(ON) = 5 mW @ VGS = 10 V
● RDS(ON) = 6 mW @ VGS = 4.5 V
●· Low gate charge
●· Fast switching
●· High performance trench technology for extremely low RDS(ON)
●Applications
●· DC/DC converter
●· Motor Drives
Fairchild
7 Pages / 0.3 MByte
Fairchild
18 Pages / 0.94 MByte
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