| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -40.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 20.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 3.80 W |
| Input Capacitance | 1.71 nF |
| Gate Charge | 17.0 nC |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | -40.0 A |
| Rise Time | 11.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDD6685 is a P-channel MOSFET is a rugged gate version of advanced PowerTrench® process, fast switching speed and high performance trench technology for extremely low RDS(ON).
● Fast switching
● ±20V Gate-source voltage
● High power and current handling capability
● AEC-Q101 Qualified
Fairchild
18 Pages / 0.94 MByte
Fairchild
7 Pages / 0.87 MByte
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