| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 30.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 23.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Input Capacitance | 1.11 nF |
| Gate Charge | 23.0 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 9.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDD5690 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 23nC Typical low gate charge
Fairchild
10 Pages / 0.86 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
7 Pages / 0.87 MByte
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