| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 42.0 W |
| Input Capacitance | 759 pF |
| Gate Charge | 15.0 nC |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | -15.0 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDD5614P is a P-channel MOSFET uses high voltage PowerTrench® process, fast switching speed, high performance trench technology for extremely low RDS (ON).
● High power and current handling capability
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