TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 32.0 A |
Case/Package | TO-252 |
Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 95.0 mW |
Input Capacitance | 1.25 nF |
Gate Charge | 18.5 nC |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 32.0 A |
Rise Time | 46.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Cut Tape (CT) |
The FDD3682 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in high voltage synchronous rectification, DC-to-DC converters and off-line UPS application.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
● AEC-Q101 qualified
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