| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 21.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 66.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 95.0 W |
| Input Capacitance | 1.29 nF |
| Gate Charge | 19.0 nC |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 21.0 A |
| Rise Time | 19.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDD2582 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in high voltage synchronous rectification, electronic valve train system, DC-to-DC converters and off-line UPS application.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
● AEC-Q101 Qualified
Fairchild
18 Pages / 0.94 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
7 Pages / 0.87 MByte
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