| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 44.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | 4.00 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FDC658AP is a logic level single P-channel MOSFET produced using Fairchild"s advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
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5 Pages / 0.21 MByte
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