| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 2.50 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 95.0 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 220 pF |
| Gate Charge | 2.30 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
● Low gate charge
● Very fast switching
● Small footprint
● Low profile
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FAIRCHILD SEMICONDUCTOR FDC6561AN Dual MOSFET, Dual N Channel, 2.5A, 30V, 0.082Ω, 10V, 1.8V
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Dual N-Channel Logic Level PowerTrench MOSFET
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