| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.00 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 70.0 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 324 pF |
| Gate Charge | 3.30 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 3.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FDC6401N is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±12V Gate to source voltage
● 3A Continuous drain/output current
● 12A Pulsed drain/output current
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FAIRCHILD SEMICONDUCTOR FDC6401N Dual MOSFET, Dual N Channel, 3A, 20V, 0.05Ω, 4.5V, 900mV
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