| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -4.50 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 48.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.16 nF |
| Gate Charge | 10.0 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | -4.50 A |
| Rise Time | 9.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC638P is a 2.5V specified P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
● High performance Trench technology for extremely low RDS (ON)
● 10nC Typical low gate charge
Fairchild
5 Pages / 0.1 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
5 Pages / 0.15 MByte
Fairchild
4 Pages / 0.19 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
P-Channel 2.5V PowerTrench® Specified MOSFET
Fairchild
MOSFET Transistor, P Channel, 4.5A, -20V, 0.037Ω, 12V, -800mV
Fairchild
FAIRCHILD SEMICONDUCTOR FDC638P MOSFET Transistor, P Channel, 4.5A, -20V, 0.039Ω, 12V, -800mV
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
