| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 6.20 A |
| Case/Package | SOT-163/SOT23-6 |
| Drain to Source Resistance (on) (Rds) | 24.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.12 nF |
| Gate Charge | 10.5 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 6.20 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC637AN is a 2.5V specified single N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● 10.5nC Typical low gate charge
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