TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Voltage Rating (DC) | 30.0 V |
Current Rating | 5.20 A |
Case/Package | SSOT |
Drain to Source Resistance (on) (Rds) | 42.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 1.60 W |
Input Capacitance | 538 pF |
Gate Charge | 11.0 nC |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 5.20 A |
Rise Time | 17.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Listed by Manufacturer |
Packaging | Cut Tape (CT) |
N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features SuperSOT-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.
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