| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.30 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 115 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 467 pF |
| Gate Charge | 4.40 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 2.30 A |
| Rise Time | 13.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC6312P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
● ±8V Gate to source voltage
● -2.3A Continuous drain/output current
● 7A Pulsed drain/output current
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FAIRCHILD SEMICONDUCTOR FDC6312P Dual MOSFET, Dual P Channel, 2.3A, -20V, 115mohm, -4.5V, -900mV
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