| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.20 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 125 mΩ |
| Polarity | Dual P-Channel, P-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 337 pF |
| Gate Charge | 3.70 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 2.20 A |
| Rise Time | 12.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tape |
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
Fairchild
8 Pages / 0.09 MByte
Fairchild
5 Pages / 0.06 MByte
Fairchild
MOSFET Transistor, Dual P Channel, -2.2A, -20V, 0.1Ω, -4.5V, -1V
Rochester
2200mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
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