| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 680 mA |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 450 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 900 mW |
| Input Capacitance | 50.0 pF |
| Gate Charge | 1.64 nC |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 8.00 V |
| Continuous Drain Current (Ids) | 680 mA |
| Rise Time | 8.50 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
● Very low level gate drive requirements allowing direct operation in 3V circuits
● Gate-source Zener for ESD ruggedness
● Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
● 8V Gate-source voltage
● 0.68A Continuous drain/output current
● 2A Pulsed drain/output current
Fairchild
2 Pages / 0.19 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
1 Pages / 0.13 MByte
Fairchild
Digital FET, Dual N-Channel
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6303N Dual MOSFET, Dual N Channel, 680mA, 25V, 450mohm, 4.5V, 800mV
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