| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 220 mA |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 38.0 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 900 mW |
| Input Capacitance | 9.50 pF |
| Gate Charge | 490 pC |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Drain to Source) | 25.0 V |
| Continuous Drain Current (Ids) | 220 mA |
| Rise Time | 4.50 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET"s can replace several digital transistors, with a variety of bias resistors.
● Very low level gate drive requirements allowing direct operation in 3V circuits
● Gate-source Zener for ESD ruggedness
● -0.5 to 8V Gate to source voltage
● 0.22A Continuous drain/output current
● 0.5A Pulsed drain/output current
Fairchild
5 Pages / 0.36 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
4 Pages / 0.07 MByte
Fairchild
1 Pages / 0.13 MByte
Fairchild
Dual N-Channel , Digital FET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6301N Dual MOSFET, Dual N Channel, 220mA, 25V, 4Ω, 4.5V, 850mV
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