TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SSOT |
Drain to Source Resistance (on) (Rds) | 58.0 mΩ |
Polarity | P-Channel |
Power Dissipation | 1.60 W |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
Continuous Drain Current (Ids) | 4.90 mA |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Reel |
The FDC610PZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for battery power, load switching, battery charging circuits and DC-to-DC conversion applications.
● High performance Trench technology for extremely low RDS (ON)
● 17nC Typical low gate charge
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
P-Channel 30V 42mOhm 24NC SMT PowerTrench Mosfet - SSOT-6
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