| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -6.00 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 21.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.70 nF |
| Gate Charge | 18.0 nC |
| Drain to Source Voltage (Vds) | -12.0 V |
| Breakdown Voltage (Drain to Source) | -12.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 6.00 A, -6.00 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC606P is a 1.8V specified P-channel MOSFET uses Fairchild"s low voltage PowerTrench® process. It has been optimized for battery power management, load switch and battery protection applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
8 Pages / 0.09 MByte
Fairchild
6 Pages / 1.89 MByte
Fairchild
5 Pages / 0.15 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC606P MOSFET Transistor, P Channel, 6A, -12V, 26mohm, -4.5V, -500mV
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