| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.50 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 35.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.46 nF |
| Gate Charge | 14.0 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Drain to Source) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | -5.50 A |
| Rise Time | 11.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC602P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It is suitable for use in battery management, load switch and battery protection applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
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