| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 4.30 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 55.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 650 pF |
| Gate Charge | 12.5 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 4.30 A |
| Rise Time | 8.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDC5612 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● High performance Trench technology for extremely low RDS (ON)
● 12.5nC Typical low gate charge
Fairchild
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