| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 1.10 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 725 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 234 pF |
| Gate Charge | 8.00 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.10 A |
| Rise Time | 6.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDC2612 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● Fast switching speed
● 8nC Typical low gate charge
Fairchild
5 Pages / 0.19 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
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