| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 1.90 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Input Capacitance | 11.4 nF |
| Gate Charge | 265 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDB8832 is a logic level N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in starter/alternator systems, electronic power steering systems and DC-to-DC converters.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
Fairchild
10 Pages / 1.17 MByte
Fairchild
7 Pages / 0.87 MByte
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