| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 61.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 16.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Input Capacitance | 2.88 nF |
| Gate Charge | 41.0 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 61.0 A |
| Rise Time | 85.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Cut Tape (CT) |
The FDB3652 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
● Low miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
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