| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | D2PAK |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 28.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDB28N30TM is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
● Improved dV/dt capability
● 100% Avalanche tested
● Fast switching
● 39nC Typical low gate charge
● 35pF Typical low Crss
Fairchild
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FAIRCHILD SEMICONDUCTOR FDB28N30TM MOSFET Transistor, N Channel, 28A, 300V, 108mohm, 10V, 5V
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