| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 290 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 140 W |
| Drain to Source Voltage (Vds) | 300 V |
| Breakdown Voltage (Drain to Source) | 300 V |
| Continuous Drain Current (Ids) | 14.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from Fairchild Semiconductor"s family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
● Improved dV/dt capability
● 100% Avalanche tested
● 18nC Typical low gate charge
● 17pF Typical low Crss
Fairchild
18 Pages / 0.94 MByte
Fairchild
1 Pages / 0.07 MByte
Fairchild
4 Pages / 1.15 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
N-Channel UniFETTM MOSFET 300V, 14A, 290m
Fairchild
FAIRCHILD SEMICONDUCTOR FDB14N30TM MOSFET Transistor, N Channel, 14A, 300V, 0.24Ω, 10V, 5V
Fairchild
Trans MOSFET N-CH 300V 14A 3Pin(2+Tab) D2PAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
