TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-3PN |
Drain to Source Resistance (on) (Rds) | 265 mΩ |
Polarity | N-Channel |
Power Dissipation | 239 W |
Input Capacitance | 2.86 nF |
Gate Charge | 60.0 nC |
Drain to Source Voltage (Vds) | 500V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 19.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The FDA18N50 is an UniFET™ N-channel MOSFET produced using Fairchild Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 45nC Typical low gate charge
● 25pF Typical low Crss
● 100% Avalanche tested
Fairchild
8 Pages / 1.62 MByte
Fairchild
13 Pages / 0.57 MByte
Fairchild
4 Pages / 0.62 MByte
Fairchild
1 Pages / 0.14 MByte
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Trans MOSFET N-CH 500V 19A 3Pin(3+Tab) TO-3PN Rail
Freescale
MOSFET N-CH 500V 19A TO-3P
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