| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 Full Pack |
| Drain to Source Resistance (on) (Rds) | 260 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 37.9 W |
| Input Capacitance | 2.25 nF |
| Gate Charge | 70.0 nC |
| Drain to Source Voltage (Vds) | 600V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 16.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
Description
●SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system
●miniaturization and higher efficiency.
●Features
●• 650V @TJ = 150°C
●• Typ. Rds(on)=0.22:
●• Ultra low gate charge (typ. Qg=45nC)
●• Low effective output capacitance (typ. Coss.eff=110pF)
●• 100% avalanche tested
Fairchild
10 Pages / 1.18 MByte
Fairchild
10 Pages / 1.18 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCPF16N60NT Power MOSFET, N Channel, 16A, 600V, 170mohm, 10V, 2V
Fairchild
Trans MOSFET N-CH 600V 16A 3Pin(3+Tab) TO-220F Rail
Freescale
MOSFET N-CH 600V 16A TO-220F
Freescale
MOSFET N-CH 600V TO-220-3
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