| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 600V |
| Continuous Drain Current (Ids) | 20.6A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube, Rail |
The FCP190N60E is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 57nC)
● Low effective output capacitance (Coss.eff = 160pF)
● 100% avalanche tested
Fairchild
10 Pages / 0.3 MByte
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11 Pages / 0.54 MByte
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FAIRCHILD SEMICONDUCTOR FCP190N60 Power MOSFET, N Channel, 20.2A, 600V, 0.17Ω, 10V, 2.5V
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FAIRCHILD SEMICONDUCTOR FCP190N60E Power MOSFET, N Channel, 20.6A, 600V, 0.16Ω, 10V, 2.5V
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Trans MOSFET N-CH 600V 20.2A 3Pin TO-220 Tube
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