| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | N-Channel |
| Power Dissipation | 134 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 16.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The FCP16N60N is a N-channel SupreMOS® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 40.2nC)
● Low effective output capacitance (Coss.eff = 176pF)
● 100% avalanche tested
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FAIRCHILD SEMICONDUCTOR FCP16N60N Power MOSFET, N Channel, 16A, 600V, 170mohm, 10V, 2V
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