| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 3.90 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 1.00 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50.0 W |
| Input Capacitance | 540 pF |
| Gate Charge | 16.6 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 3.90 A |
| Rise Time | 45.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 12.8nC)
● Low effective output capacitance (Coss.eff = 32pF)
● 100% avalanche tested
Fairchild
8 Pages / 0.47 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
7 Pages / 0.87 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCD4N60TM Power MOSFET, N Channel, 3.9A, 600V, 1Ω, 10V, 5V
Fairchild
Trans MOSFET N-CH 600V 3.9A 3Pin(2+Tab) DPAK T/R
Fairchild
MOSFET N-CH 600V 3.9A DPAK
Freescale
MOSFET N-CH 600V 3.9A DPAK
ON Semiconductor
MOSFET N-CH 600V 3.9A DPAK
ON Semiconductor
MOSFET N-CH 600V 3.9A DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
